RT9611C数据手册集成电路（IC）的栅极驱动器规格书PDF

描述 Description

The RT9611C/D is a high frequency, synchronous rectified, single phase dual MOSFET driver designed to adapt from normal MOSFET driving applications to high performance CPU VR driving capabilities.



The RT9611C/D can be utilized under both VCC = 5V or VCC = 12V applications. The RT9611C/D also builds in an internal power switch to replace external boot strap diode. The RT9611C/D can support switching frequency efficiently up to 500kHz. The RT9611C/D has the UGATE driving circuit and the LGATE driving circuit for synchronous rectified DC/DC converter applications. The driving rising/falling time capability is designed within 30ns and the shoot through protection mechanism is designed to prevent shoot through of high-side and low-side power MOSFETs. The RT9611C/D has PWM tri-state shut down and OD input shut down functions which can force driver output into high impedance.



The difference of the RT9611C and the RT9611D is the propagation delay, tUGATEpdh. The RT9611D has comparatively larger tUGATEpdh than the RT9611D. Hence, the RT9611C is usually recommended to be utilized in performance oriented applications, such as high power density CPU VR or GPU VR.



The RT9611C/D is available in the small footprint WDFN-8L 3x3 package.

特性 Features

•Drive Two N-MOSFETs
•Adaptive Shoot Through Protection
•Embedded Bootstrap Diode
•Support High Switching Frequency
•Fast Output Rising Time
•Tri-State Input for Bridge Shutdown
•Disable Control Input
•RoHS Compliant and Halogen Free

应用 Application

• Core Voltage Supplies for Desktops, Motherboard CPUs
• High Frequency Low Profile DC/DC Converters
• High Current Low Voltage DC/DC Converters