首页 >RT9011-SSPQWC.TR>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
PortablePowerManagement300mADualLDORegulator GeneralDescription TheRT9011isadualchannel,lownoise,andlowdropoutregulatorsourcingupto300mAateachchannel.Therangeofoutputvoltageisfrom1.2Vto3.6Vbyoperatingfrom2.5Vto5.5Vinput. Features •WideOperatingVoltageRanges:2.5Vto5.5V •Low-NoiseforRFApplica | RichTekRichtek Technology Corporation 立锜科技立锜科技股份有限公司 | RichTek | ||
PortablePowerManagement300mADualLDORegulator | RichTekRichtek Technology Corporation 立锜科技立锜科技股份有限公司 | RichTek | ||
PortablePowerManagement300mADualLDORegulator GeneralDescription TheRT9011isadualchannel,lownoise,andlowdropoutregulatorsourcingupto300mAateachchannel.Therangeofoutputvoltageisfrom1.2Vto3.6Vbyoperatingfrom2.5Vto5.5Vinput. Features •WideOperatingVoltageRanges:2.5Vto5.5V •Low-NoiseforRFApplica | RichTekRichtek Technology Corporation 立锜科技立锜科技股份有限公司 | RichTek | ||
PortablePowerManagement300mADualLDORegulator | RichTekRichtek Technology Corporation 立锜科技立锜科技股份有限公司 | RichTek | ||
Powerdissipation FEATURE Powerdissipation PCM:0.2W（Tamb=25℃） Collectorcurrent ICM:0.03A Collector-basevoltage V(BR)CBO:30V Operatingandstoragejunctiontemperaturerange Tj,Tstg:-55℃to+150℃ | SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司 | SKTECHNOLGY | ||
TRANSISTOR竊?NPN竊 TRANSISTOR（NPN） FEATURE Powerdissipation PCM:0.31W（Tamb=25℃） Collectorcurrent ICM:0.03A Collector-basevoltage V(BR)CBO:30V Operatingandstoragejunctiontemperaturerange Tj,Tstg:-55℃to+150℃ | JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 长电科技江苏长电科技股份有限公司 | JIANGSU | ||
TO-92Plastic-EncapsulateTransistors TRANSISTOR（NPN） FEATURE Powerdissipation PCM:0.31W（Tamb=25℃） Collectorcurrent ICM:0.03A Collector-basevoltage V(BR)CBO:30V Operatingandstoragejunctiontemperaturerange Tj,Tstg:-55℃to+150℃ | DAYADaya Electric Group Co., Ltd. 大亚电器集团大亚电器集团有限公司 | DAYA | ||
NPNSiliconEpitaxialPlanarTransistor FEATURES ●CollectorCurrent.(IC=30mA） ●Powerdissipation.(PC=200mW) APPLICATIONS ●AMconverter,AM/FMifamplifiergeneralpurposetransistor | BILINGalaxy Semi-Conductor Holdings Limited 银河微电常州银河世纪微电子股份有限公司 | BILIN | ||
SILICONEPITAXIALPLANARTRANSISTOR Features •CollectorCurrent.(IC=30mA） •Powerdissipation.(PC=200mW) MechanicalData •Case:SOT-23,MoldedPlastic •Terminals:SolderableperMIL-STD-202,Method208 •Polarity:SeeDiagrams •Approx.Weight:0.008grams | SUNMATESUNMATE electronic Co., LTD 森美特森美特半导体股份有限公司 | SUNMATE | ||
NPNSiliconEpitaxialPlanarTransistor FEATURES ●CollectorCurrent.(IC=30mA） ●Powerdissipation.(PC=200mW) APPLICATIONS ●AMconverter,AM/FMifamplifiergeneralpurposetransistor | LUGUANGShenzhen Luguang Electronic Technology Co., Ltd 鲁光电子深圳市鲁光电子科技有限公司 | LUGUANG |
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