Composite Transistor With Resistor

DESCRIPTION RT3N55M is a composite transistor built with two RT1N144 chips in SC-88 package. FEATURE Silicon NPN epitaxial type Each transistor elements are independent. Mini package for easy mounting APPLICATION Inverted circuit, switching circuit, interface circuit, driver cir

文件：62.61 Kbytes 页数：3 Pages

ISAHAYA

谏早电子

复合晶体管

IDC

Fast Switching

文件：68.03 Kbytes 页数：2 Pages

ISC

无锡固电

Power Field Effect Transistor

Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TWOS These TMOS Power FETs are designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. • Silicon Gate for Fast Switching Speeds — Switching Tim

文件：125.02 Kbytes 页数：3 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Power Field Effect Transistor

Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TWOS These TMOS Power FETs are designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. • Silicon Gate for Fast Switching Speeds — Switching Tim

文件：125.02 Kbytes 页数：3 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司