0.8Ω, Low Ron, Dual SPDT Analog Switch with Negati

• Low ON-State Resistance:0.8Ω (TYP)• Supply Range: +2.5V to +5.5V• Negative Signal Swing Capability: -2V to V+• Break-Before-Make Switching• Fast Switching Times• 1.8V Logic Control• Rail-to-Rail Input and Output Operation• Extended Industrial Temperature Range: -40°C to +85°C• Available in Green Q;

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RUNIC

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850 MHz 1 Watt Power Amplifier with Active Bias

文件：214.07 Kbytes 页数：6 Pages

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850 MHz 1 Watt Power Amplifier with Active Bias

Product Description Sirenza Microdevices’ SPA-2118 is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces reliable and

文件：215.1 Kbytes 页数：6 Pages

SIRENZA

850MHz 1 WATT POWER AMPLIFIER WITH ACTIVE BIAS

文件：534.42 Kbytes 页数：7 Pages

RFMD

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