包装：托盘 类别：电阻器 电阻器网络，阵列 描述：SFERNICE THIN FILMS

Vishay Sfernice

包装：托盘 类别：电阻器 电阻器网络，阵列 描述：SFERNICE THIN FILMS

Vishay Sfernice

包装：托盘 类别：电阻器 电阻器网络，阵列 描述：SFERNICE THIN FILMS

Vishay Sfernice

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TPICAL RDS(on) = 0.073 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATAT AT 100°C ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ UNINTERRUPTIBLE POWER SUPPLY (UP

文件：326.58 Kbytes 页数：7 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TPICAL RDS(on) = 0.073 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATAT AT 100°C ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ UNINTERRUPTIBLE POWER SUPPLY (UP

文件：326.58 Kbytes 页数：7 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 20A@ TC=25℃ ·Drain Source Voltage : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 85mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

文件：348.63 Kbytes 页数：2 Pages

ISC

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