RM3205中文资料RECTRON数据手册PDF规格书
RM3205规格书详情
General Features
VDS = 55V,ID =110A
RDS(ON) < 12mΩ @ VGS =10V
Special process technology for high ESD capability
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package for good heat dissipation