首页 >RM25HG-24S其他三极管>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
HIGHSPEEDSWITCHINGUSENON-INSULATEDTYPE | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | Mitsubishi | ||
FASTRECOVERYDIODEMODULESHIGHSPEEDSWITCHINGUSEHIGHSPEEDSWITCHINGUSE •IDCDCcurrent..................................25A •VRRMRepetitivepeakreversevoltage..............1200V •trrReverserecoverytime.............0.3µs •ONEARM •Non-InsulatedType APPLICATION Forsnubbercircuit(IPMorIGBTmodule) | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | Mitsubishi | ||
SuperFastRecoverySingleDiode(25Amperes/1200Volts) Description: PowerexSuperFastRecoveryDiodesaredesignedforuseinapplicationsrequiringfastswitching. Features: □Non-IsolatedPackage □PlanarChips □trr=300nsMax. Applications: □SnubberCircuits □SwitchingPowerSupplies □FreeWheeling | POWEREX Powerex Power Semiconductors | POWEREX | ||
HIGHSPEEDSWITCHINGUSENON-INSULATEDTYPE •IDCDCcurrent..................................25A •VRRMRepetitivepeakreversevoltage..............1200V •trrReverserecoverytime.............0.3µs •ONEARM •Non-InsulatedType APPLICATION Forsnubbercircuit(IPMorIGBTmodule) | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | Mitsubishi |
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