0.3A, 60V, 6 Ohm, ESD Rated, Current Limited, Voltage Clamped, Logic Level N-Channel Power MOSFETs

These are intelligent monolithic power circuits which incorporate a lateral bipolar transistor, resistors, zener diodes and a power MOS transistor. The current limiting of these devices allow it to be used safely in circuits where a shorted load condition may be encountered. The drain to source

文件：93.44 Kbytes 页数：9 Pages

Intersil

0.3A, 60V, ESD Rated, Current Limited, Voltage Clamped Logic Level N-Channel Enhancement-Mode Power MOSFETs

文件：188.51 Kbytes 页数：13 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

0.3A, 60V, 6 Ohm, ESD Rated, Current Limited, Voltage Clamped, Logic Level N-Channel Power MOSFETs

These are intelligent monolithic power circuits which incorporate a lateral bipolar transistor, resistors, zener diodes and a power MOS transistor. The current limiting of these devices allow it to be used safely in circuits where a shorted load condition may be encountered. The drain to source

文件：93.44 Kbytes 页数：9 Pages

Intersil

0.3A, 60V, ESD Rated, Current Limited, Voltage Clamped Logic Level N-Channel Enhancement-Mode Power MOSFETs

文件：188.51 Kbytes 页数：13 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

N-Channel Enhancement Mode Field Effect Transistor

文件：588.99 Kbytes 页数：6 Pages

YANGJIE

扬杰电子