N-Channel Power MOSFET

FEATURES RDS(ON)

文件：270.39 Kbytes 页数：6 Pages

GWSEMI

唯圣电子

N-Channel Enhancement MOSFET

Features  VDS=650V, ID=12A  RDS(ON)=0.64Ω@VGS=10V(Typ.)  High Power and current handing capability  Lead free product is acquired Main Applications  Battery Protection  Load Switch  Power Management

文件：2.11178 Mbytes 页数：5 Pages

GWSEMI

唯圣电子

N-CHANNEL ENHANCEMENT MODE MOSFET

FEATURES • Low Crss • Low gate charge • Fast switching • Improved ESD capability • Improved dv/dt capability • 100% avalanche energy test

文件：1.55476 Mbytes 页数：7 Pages

RECTRON

丽正

N-CHANNEL ENHANCEMENT MODE MOSFET

FEATURES • Low Crss • Low gate charge • Fast switching • Improved ESD capability • Improved dv/dt capability • 100% avalanche energy test

文件：1.55476 Mbytes 页数：7 Pages

RECTRON

丽正