Silicon Planar Zener Diode for Stabilized Power Supply

Features • Low leakage, low zener impedance and maximum power dissipation of 500 mW. • Wide spectrum from 1.9 V through 38 V of zener voltage provide flexible application. • LLD Package is suitable for high density surface mounting and high speed assembly.

文件：100.22 Kbytes 页数：8 Pages

RENESAS

瑞萨

NPN SILICON RF POWER TRANSISTOR

文件：19.14 Kbytes 页数：1 Pages

ASI

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI UHBS30-1 is Designed for Class C, FM Base Applications up to 900 MHz. FEATURES: • Internal Input Matching Network • PG = 7.5 dB at 30 W/900 MHz • Omnigold™ Metalization System

文件：18.42 Kbytes 页数：1 Pages

ASI

Directional Coupler

文件：234.97 Kbytes 页数：1 Pages

MINI