Silicon Schottky Barrier Diode for High Speed Switching

Features • Low Power consumption (Low reverse leak current) and high speed (Low capacitance). • Halogen free, Environmental friendly Package include Conformity to RoHS Directive. • Ultra small Package (0.6 mm × 0.3 mm Size leadless type)

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RENESAS

瑞萨

3L TAPE AND REEL DATA

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AOSMD

万国半导体

SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features low feedback and output capacitances, re

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Polyfet

FAST RECOVERY DIODES Hockey Puk Version

Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Press-puk encapsulation ■ Case style confo

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IRF