Silicon Schottky Barrier Diode for high Speed Switching

Features • Low Power consumption (Low reverse leak current) and high speed (Low capacitance). • We can support the lineup of environmental friendly halogen free type on your demand. • Extremely small Flat Lead Package (EFP) is suitable for compact and high-density surface mount design.

文件：95.31 Kbytes 页数：6 Pages

RENESAS

瑞萨

Silicon Schottky Barrier Diode for high Speed Switching

Features • Low Power consumption (Low reverse leak current) and high speed (Low capacitance). • We can support the lineup of environmental friendly halogen free type on your demand. • Extremely small Flat Lead Package (EFP) is suitable for compact and high-density surface mount design.

文件：95.31 Kbytes 页数：6 Pages

RENESAS

瑞萨

Silicon Schottky Barrier Diode for high Speed Switching

Renesas

瑞萨

Silicon Schottky Barrier Diode for High Speed Switching

Features • Low Power consumption (Low reverse leak current) and high speed (Low capacitance). • Halogen free, Environmental friendly Package include Conformity to RoHS Directive. • Ultra small Package (0.6 mm × 0.3 mm Size leadless type)

文件：197.17 Kbytes 页数：7 Pages

RENESAS

瑞萨

3L TAPE AND REEL DATA

文件：88.27 Kbytes 页数：1 Pages

AOSMD

万国半导体

SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features low feedback and output capacitances, re

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Polyfet