| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
JUMBOSOZACELL | MIC MIC GROUP RECTIFIERS | MIC | ||
SiliconSchottkyBarrierDiodeforHighSpeedSwitching Features •LowPowerconsumption(Lowreverseleakcurrent)andhighspeed(Lowcapacitance). •Wecansupportthelineupofenvironmentalfriendlyhalogenfreetypeonyourdemand. •ExtremelysmallFlatLeadPackage(SFP)issuitableforcompactandhigh-densitysurfacemountdesign. | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
SiliconSchottkyBarrierDiodeforHighSpeedSwitching Features •LowPowerconsumption(Lowreverseleakcurrent)andhighspeed(Lowcapacitance). •Wecansupportthelineupofenvironmentalfriendlyhalogenfreetypeonyourdemand. •ExtremelysmallFlatLeadPackage(SFP)issuitableforcompactandhigh-densitysurfacemountdesign. | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
SiliconSchottkyBarrierDiodeforhighSpeedSwitching Features •LowPowerconsumption(Lowreverseleakcurrent)andhighspeed(Lowcapacitance). •Wecansupportthelineupofenvironmentalfriendlyhalogenfreetypeonyourdemand. •ExtremelysmallFlatLeadPackage(EFP)issuitableforcompactandhigh-densitysurfacemountdesign. | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
SiliconSchottkyBarrierDiodeforhighSpeedSwitching Features •LowPowerconsumption(Lowreverseleakcurrent)andhighspeed(Lowcapacitance). •Wecansupportthelineupofenvironmentalfriendlyhalogenfreetypeonyourdemand. •ExtremelysmallFlatLeadPackage(EFP)issuitableforcompactandhigh-densitysurfacemountdesign. | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
SiliconSchottkyBarrierDiodeforHighSpeedSwitching Features •LowPowerconsumption(Lowreverseleakcurrent)andhighspeed(Lowcapacitance). •Halogenfree,EnvironmentalfriendlyPackageincludeConformitytoRoHSDirective. •UltrasmallPackage(0.6mm×0.3mmSizeleadlesstype) | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
3LTAPEANDREELDATA | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
SILICONGATEENHANCEMENTMODERFPOWERVDMOSTRANSISTOR GeneralDescription SiliconVDMOSandLDMOStransistorsdesignedspecificallyforbroadbandRFapplications.SuitableforMilitaryRadios,CellularandPagingAmplifierBaseStations,BroadcastFM/AM,MRI,LaserDriverandothers. Polyfetprocessfeatureslowfeedbackandoutputcapacitances,re | Polyfet POLYFET | Polyfet | ||
FASTRECOVERYDIODESHockeyPukVersion Features ■HighpowerFASTrecoverydiodeseries ■2.0to3.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Press-pukencapsulation ■Casestyleconfo | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
RFIDSystemswithISO/IEC18000-3(15693)Compliance | OMRONOmron Electronics LLC 欧姆龙欧姆龙株式会社 | OMRON | ||
VariableCapacitanceDiode Descriptions •ForFMtuner •Monolithicchipwithcommoncathodeforperfecttackingofbothdiodes •Uniform“squarelaw”characteristics •Idealhifituningdevicewhenusedinlow-distortion,back-to-backconfiguration Features •Lowseriesresistance :rs=0.3Ω(Typ.) | AUK AUK | AUK | ||
VariableCapacitanceDiode | AUK AUK | AUK | ||
TheSE-703isamicroprocessor-basedearth-fault | LittelfuseLittelfuse Inc. 力特力特公司 | Littelfuse | ||
TheSE-703isamicroprocessor-basedearth-fault | LittelfuseLittelfuse Inc. 力特力特公司 | Littelfuse | ||
TheSE-703isamicroprocessor-basedearth-fault | LittelfuseLittelfuse Inc. 力特力特公司 | Littelfuse | ||
TheSE-703isamicroprocessor-basedearth-fault | LittelfuseLittelfuse Inc. 力特力特公司 | Littelfuse | ||
SILICONGATEENHANCEMENTMODERFPOWERVDMOSTRANSISTOR 130.0WattsPush-Pull PackagestyleAH GeneralDescription SiliconVDMOSandLDMOStransistorsdesignedspecificallyforbroadbandRFapplications.SuitableforMilitaryRadios,CellularandPagingAmplifierBaseStations,BroadcastFM/AM,MRI,LaserDriverandothers. | Polyfet POLYFET | Polyfet | ||
SILICONGATEENHANCEMENTMODERFPOWERVDMOSTRANSISTOR GeneralDescription SiliconVDMOSandLDMOStransistorsdesignedspecificallyforbroadbandRFapplications.SuitableforMilitaryRadios,CellularandPagingAmplifierBaseStations,BroadcastFM/AM,MRI,LaserDriverandothers. Polyfetprocessfeatureslowfeedbackandoutputcapacitances,re | Polyfet POLYFET | Polyfet | ||
SILICONGATEENHANCEMENTMODERFPOWERVDMOSTRANSISTOR GeneralDescription SiliconVDMOSandLDMOStransistorsdesignedspecificallyforbroadbandRFapplications.SuitableforMilitaryRadios,CellularandPagingAmplifierBaseStations,BroadcastFM/AM,MRI,LaserDriverandothers. Polyfet™processfeatureslowfeedbackandoutputcapacitances,r | Polyfet POLYFET | Polyfet | ||
LowPowerMicroprocessorSupervisorywithBatterySwitch-Over DESCRIPTION TheSP703/704devicesaremicroprocessor(µP)supervisorycircuitsthatintegrateamyriadofcomponentsinvolvedindiscretesolutionstomonitorpower-supplyandbattery-controlfunctionsinµPanddigitalsystems.Theserieswillsignificantlyimprovesystemreliabilityandoperati | SipexSipex Corporation 西伯斯|迈凌西伯斯公司 | Sipex |
详细参数
- 型号：
RKD703KJR
- 制造商：
RENESAS
- 制造商全称：
Renesas Technology Corp
- 功能描述：
Silicon Schottky Barrier Diode for High Speed Switching
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS |
23+ |
SOD-723 |
89630 |
当天发货全新原装现货 |
询价 | ||
RENESAS(瑞萨)/IDT |
23+ |
SFP2 |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
询价 | ||
一级代理 |
23+ |
N/A |
58800 |
一级代理放心采购 |
询价 | ||
一级代理 |
23+ |
N/A |
58800 |
一级代理放心采购 |
询价 | ||
RENESAS/瑞萨 |
2019+PBHF |
SOD723 |
7318 |
向鸿代理渠道,有现货常备料,优势料 |
询价 | ||
RENESAS/瑞萨 |
23+ |
SOD723 |
900000 |
原装进口特价 |
询价 | ||
RENESAS/瑞萨 |
23+ |
SOD723 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
RENESAS/瑞萨 |
2022 |
SOD723 |
80000 |
原装现货,OEM渠道,欢迎咨询 |
询价 | ||
RENESAS |
10+ |
SFP |
8000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
RENESAS/瑞萨 |
24+23+ |
SOD723 |
12580 |
16年电子元件现货供应商 终端BOM表可配单提供样品 |
询价 |
相关规格书
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- RKD703KKR
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相关库存
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- RKFSE-M3-6
- RKH0160AKUP
- RKH0160BKJ
- RKH10BD
- RKH10DD
- RKH10KD
- RKH10RD
- RKH10TD
- RKH11BD
- RKH11DD
- RKH11KD
- RKH11RD
- RKH11TD
- RKH12BD
