Silicon Schottky Barrier Diode for High Speed Switching

Features • Low Power consumption (Low reverse leak current) and high speed (Low capacitance). • Halogen free, Environmental friendly Package include Conformity to RoHS Directive. • Ultra small Package (0.6mm×0.3mm Size leadless type)

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RENESAS

瑞萨

Silicon Schottky Barrier Diode for High Speed Switching

Renesas

瑞萨

SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features low feedback and output capacitances resu

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POLYFET

Divide by: 64/65/72 triple modulus low power ECL prescaler

DESCRIPTION The SA702 triple modulus (Divide By 64/65/72) low power ECL prescaler is used in synthesizer systems to achieve low phase lock time, broad operating range, high reference frequency and small frequency step sizes. The minimum supply voltage is 2.7V and is compatible with the CMOS UMA10

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PHI

PHI

SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features low feedback and output capacitances, re

文件：36.44 Kbytes 页数：2 Pages

POLYFET