RJP30中文资料Silicon N Channel IGBT High Speed Power Switching数据手册Renesas规格书
RJP30规格书详情
特性 Features
• Trench gate and thin wafer technology (G6H-II series)
• Low collector to emitter saturation voltage VCE(sat) = 1.1V typ
• High speed switching tr = 90 ns typ, tf = 250 ns typ
• Low leak current ICES = 1µA max
• Isolated package TO-220FL
技术参数
- 型号：
RJP30
- 制造商：
RENESAS
- 制造商全称：
Renesas Technology Corp
- 功能描述：
Silicon N Channel IGBT High Speed Power Switching
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS |
23+ |
TO220F |
3000 |
原装正品假一罚百!可开增票! |
询价 | ||
RENESAS/瑞萨 |
25+ |
NA |
880000 |
明嘉莱只做原装正品现货 |
询价 | ||
RENESAS |
23+ |
TO-3P |
12800 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
询价 | ||
RENESAS/瑞萨 |
2447 |
SOT252 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 | ||
RENESAS |
1923+ |
TO-263 |
10000 |
只做原装特价 |
询价 | ||
RENESAS/瑞萨 |
23+ |
42 |
24981 |
原装正品代理渠道价格优势 |
询价 | ||
RENESAS |
23+ |
NA |
19854 |
专业电子元器件供应链正迈科技特价代理特价，原装元器件供应，支持开发样品 |
询价 | ||
RENESAS/瑞萨 |
23+ |
TO-220F |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
RENSHAY |
2023+ |
TO-220F |
5800 |
进口原装,现货热卖 |
询价 | ||
RENESAS |
24+ |
STO263-3 |
25000 |
一级专营品牌全新原装热卖 |
询价 |
相关库存
更多- RJP1CS28DWA
- RJMG3211L11D3FR
- RJP1CS10DWS
- RJP1CS26DWT
- RJP1CS04DWA
- RJP020N06
- RJP1CS01DWS
- RJP1CS10DWA
- RJP1CS03DWA
- RJP1CS08DWA
- RJMG2330A1610ER
- RJMU401FHO
- RJP3069DPK
- RJP3054DPN
- RJP3060DPK
- RJP30E3DPK-M0
- RJP30E2DPK-M0
- RJP3047DPK
- RJP30H2A
- RJP30E3DPP-M0
- RJP30H2DPK-M0-T2
- RJP30H1DPD
- RJP30E2
- RJP30E2DPP-M0
- RJP30H1DPP-M0
- RJP30H2DPK-M0-11
- RJP30H2DPK-M0
- RJP30K3DPP-M0
