isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 20A@ TC=25℃ · Drain Source Voltage -VDSS= 600V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.18Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：319.35 Kbytes 页数：2 Pages

ISC

无锡固电

600V - 20A - SJ MOS FET High Speed Power Switching

Features  Superjunction MOSFET  Built-in fast recovery diode  Low on-resistance RDS(on) = 0.150  typ. (at ID = 10 A, VGS = 10 V, Ta = 25C)  High speed switching

文件：151.04 Kbytes 页数：4 Pages

RENESAS

瑞萨

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 20A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.178Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：297.79 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 20A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.178Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：297.44 Kbytes 页数：2 Pages

ISC

无锡固电

600V - 20A - SJ MOS FET High Speed Power Switching

文件：58.97 Kbytes 页数：4 Pages

RENESAS

瑞萨

600V - 20A - SJ MOS FET High Speed Power Switching

文件：114.97 Kbytes 页数：8 Pages

RENESAS

瑞萨

600V - 20A - SJ MOS FET High Speed Power Switching

文件：114.97 Kbytes 页数：8 Pages

RENESAS

瑞萨

600V - 20A - SJ MOS FET High Speed Power Switching

Renesas

瑞萨

600V - 20A - SJ MOS FET High Speed Power Switching

Renesas

瑞萨