isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 16A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.72Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：297.25 Kbytes 页数：2 Pages

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无锡固电

Silicon N Channel MOS FET High Speed Power Switching

文件：88.82 Kbytes 页数：4 Pages

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Silicon N Channel MOS FET High Speed Power Switching

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Single Diode Ultra Fast Recovery Diode

Features • Ultra fast reverse recovery time: trr = 25 ns typ. (at IF = 30 A, di/dt = 100 A/μs) • Low forward voltage: VF = 2.5 V typ. (at IF = 30 A) • Low reverse current: IR = 1 μA max. (at VR = 600 V)

文件：81.47 Kbytes 页数：4 Pages

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600V - 30A - Single Diode Ultra Fast Recovery Diode

文件：73.99 Kbytes 页数：4 Pages

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Ultrafast Recovery Diode

FEATURES · Ultra fast reverse recovery time · Low reverse current · Low forward voltage APPLICATIONS · Uninterruptible Power Supply (UPS) · Power Factor Correction (PFC) · Switching Power Supply (SPS)

文件：305.76 Kbytes 页数：2 Pages

ISC

无锡固电