isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 10A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1.07Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：296.52 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance • Low leakage current • High speed switching

文件：88.77 Kbytes 页数：4 Pages

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

Renesas

瑞萨

Single Diode Ultra Fast Recovery Diode

Features • Ultra fast reverse recovery time: trr = 25 ns typ. (at IF = 10 A, di/dt = −100 A/μs) • Low forward voltage: VF = 2.5 V typ. (at IF = 10 A) • Low reverse current: IR = 1 μA max. (at VR = 600 V)

文件：80.91 Kbytes 页数：4 Pages

RENESAS

瑞萨

Single Diode Ultra Fast Recovery Diode

Features • Ultra fast reverse recovery time: trr = 25 ns typ. (at IF = 10 A, di/dt = −100 A/μs) • Low forward voltage: VF = 2.5 V typ. (at IF = 10 A) • Low reverse current: IR = 1 μA max. (at VR = 600 V)

文件：81.26 Kbytes 页数：4 Pages

RENESAS

瑞萨

Ultrafast Recovery Diode

FEATURES ·Ultrafast recovery time ·Low forward voltage ·Low reverse current APPLICATIONS ·Switching power supply ·Power switching circuits

文件：272.71 Kbytes 页数：2 Pages

ISC

无锡固电