Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 13 Ω typ. (at ID =0.4 A, VGS = 10 V, Ta = 25°C) • Low leakage current • High speed switching

文件：84.02 Kbytes 页数：4 Pages

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 0.8A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 17.5Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

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ISC

无锡固电

600V - 0.8A - MOS FET High Speed Power Switching

文件：81.37 Kbytes 页数：7 Pages

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Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 13 Ω typ. (at ID =0.4 A, VGS = 10 V, Ta = 25°C) • Low leakage current • High speed switching

文件：84.02 Kbytes 页数：4 Pages

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600V - 0.8A - MOS FET High Speed Power Switching

文件：81.37 Kbytes 页数：7 Pages

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600V - 0.8A - MOS FET High Speed Power Switching

文件：81.37 Kbytes 页数：7 Pages

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600V - 0.8A - MOS FET High Speed Power Switching

文件：81.37 Kbytes 页数：7 Pages

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Nch Single Power Mosfet 600V 0.8A 17500Mohm LDPAK(S)-(1)/To-263

The RJK6025DPE is a Nch Single Power Mosfet 600V 0.8A 17500Mohm LDPAK(S)-\n\n/To-263.

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