500V - 10A - MOS FET High Speed Power Switching

Features  Low on-resistance RDS(on) = 0.715  typ. (at ID = 5 A, VGS = 10 V, Ta = 25 C)  Low leakage current  High speed switching  Quality grade: Standard

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500V - 10A - MOS FET High Speed Power Switching

文件：87.22 Kbytes 页数：7 Pages

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500V - 10A - MOS FET High Speed Power Switching

文件：87.22 Kbytes 页数：7 Pages

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Nch Single Power Mosfet 500V 10A 850Mohm To-220Fpa

MOSFETs suitable for switching (motor drive, etc.) and load switch applications. Low on-resistance, high-speed switching, and high-robustness.

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Power MOSFETs

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