Silicon N Channel MOS FET High Speed Power Switching

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N-Channel MOSFET uses advanced trench technology

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Nch Single Power Mosfet 500V 6A 1300Mohm To-220Fl

MOSFETs suitable for switching (motor drive, etc.) and load switch applications. Low on-resistance, high-speed switching, and high-robustness. • Low on-state resistance RDS(on) = 0.96 Ω typ. (at ID = 3 A, VGS = 10 V, Ta = 25°C)\n• High speed switching\n文档文档标题类型日期Power MOS FET APPLICATION NOTEPDF3.27 MB日本語应用文档 2022年4月25日Attention of Handling Semiconductor DevicesPDF648 KB日本語应用文档 2021年4月16日RJK5033DPP-M0 DatasheetPDF78 KB数据手册 2010年11月29日功率MOS;

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Silicon N Channel MOS FET High Speed Power Switching

文件：84.43 Kbytes 页数：7 Pages

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