RJK2076DPA中文资料Nch Single Power Mosfet 200V 20A 85Mohm Wpak3F)数据手册Renesas规格书

描述 Description

MOSFETs suitable for switching (motor drive, etc.) and load switch applications. Low on-resistance, high-speed switching, and high-robustness.

特性 Features

• Low on-resistance RDS(on) = 0.068 Ω typ. (at ID = 10 A, VGS = 10 V, Ta = 25°C)
• Very low gate charge Qg = 19 nC typ. (at VDD = 160 V, VGS = 10 V, ID = 20 A, Ta = 25°C)
• Low leakage current
• High speed switching
文档文档标题类型日期Power MOS FET APPLICATION NOTEPDF3.27 MB日本語应用文档 2022年4月25日Attention of Handling Semiconductor DevicesPDF648 KB日本語应用文档 2021年4月16日RJK2076DPA DatasheetPDF90 KB数据手册 2013年1月8日RJK2076DPA　规格书PDF160 KB数据手册 2012年10月30日功率MOS FET 功率MOS FET使用时的注意事项PDF1.60 MB其他 2008年2月7日功率MOS FET 应用例子PDF721 KB其他 2008年2月7日可靠性手册PDF15.93 MB其他 2007年9月26日Addhidden documents 项目info: For device-specific or order-specific documentation, submit a support request.developer_board设计和开发模型ECAD 模块Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.扩展 ECAD 模块 产品选择Loading products for parametric search...产品选择导出settings切换fullscreen全屏settings_backup_restore重置help小贴士器件号
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