200V - 20A - MOS FET High Speed Power Switching

Features  Low on-resistance RDS(on) = 0.054  typ. (at ID = 10 A, VGS = 10 V, Ta = 25 C)  Low leakage current  High speed switching

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200V - 20A - MOS FET High Speed Power Switching

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Nch Single Power Mosfet 200V 20A 69Mohm Wpak3F)

MOSFETs suitable for switching (motor drive, etc.) and load switch applications. Low on-resistance, high-speed switching, and high-robustness. • Low on-resistance RDS(on) = 0.054 Ω typ. (at ID = 10 A, VGS = 10 V, Ta = 25 °C)\n• Low leakage current\n• High speed switching\n文档文档标题类型日期Power MOS FET APPLICATION NOTEPDF3.27 MB日本語应用文档 2022年4月25日Attention of Handling Semiconductor DevicesPDF648 KB日本語应用文档 2021年4月16日RJK2075DPA Data SheetPDF90 KB数据手;

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