RJK03E4DPA中文资料下载批发采购瑞萨-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
RJK03E4DPA	文件：111.91 Kbytes Page：7 Pages	Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching Features • High speed switching • Capable of 4.5 V gate drive • Low drive current • High density mounting • Low on-resistance • Pb-free • Halogen-free 文件：111.91 Kbytes 页数：7 Pages	RENESAS 瑞萨	RENESAS
RJK03E4DPA	文件：142.41 Kbytes Page：7 Pages	Built in SBD N Channel Power MOS FET High Speed Power Switching 文件：142.41 Kbytes 页数：7 Pages	RENESAS 瑞萨	RENESAS
RJK03E4DPA-00-J53	文件：111.91 Kbytes Page：7 Pages	Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching Features • High speed switching • Capable of 4.5 V gate drive • Low drive current • High density mounting • Low on-resistance • Pb-free • Halogen-free 文件：111.91 Kbytes 页数：7 Pages	RENESAS 瑞萨	RENESAS
RJK03E4DPA_13	文件：142.41 Kbytes Page：7 Pages	Built in SBD N Channel Power MOS FET High Speed Power Switching 文件：142.41 Kbytes 页数：7 Pages	RENESAS 瑞萨	RENESAS
RJK03E4DPA-00-J5A	文件：142.41 Kbytes Page：7 Pages	Built in SBD N Channel Power MOS FET High Speed Power Switching 文件：142.41 Kbytes 页数：7 Pages	RENESAS 瑞萨	RENESAS
RJK03E4DPA	文件：300 bytes Page：1 Pages	Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching	Renesas 瑞萨	Renesas

型号：
RJK03E4DPA
制造商：
RENESAS
制造商全称：
Renesas Technology Corp
功能描述：
Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching

更多RJK03E4DPA供应商更新时间2025-10-10 14:00:00