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RJK0332DPB-01#J0_RENESAS/瑞萨_MOSFET N-CH 30V 35A LFPAK华来深一部
- 详细信息
- 规格书下载
产品属性
- 类型
描述
- 型号:
RJK0332DPB-01#J0
- 功能描述:
MOSFET N-CH 30V 35A LFPAK
- RoHS:
是
- 类别:
分离式半导体产品 >> FET - 单
- 系列:
-
- 标准包装:
1,000
- 系列:
MESH OVERLAY™ FET
- 型:
MOSFET N 通道,金属氧化物 FET
- 特点:
逻辑电平门
- 漏极至源极电压(Vdss):
200V 电流 - 连续漏极(Id) @ 25°
- C:
18A 开态Rds(最大)@ Id, Vgs @ 25°
- C:
180 毫欧 @ 9A,10V Id 时的
- Vgs(th)(最大):
4V @ 250µA 闸电荷(Qg) @
- Vgs:
72nC @ 10V 输入电容(Ciss) @
- Vds:
1560pF @ 25V 功率 -
- 最大:
40W
- 安装类型:
通孔
- 封装/外壳:
TO-220-3 整包
- 供应商设备封装:
TO-220FP
- 包装:
管件
供应商
- 企业:
深圳市华来深电子有限公司
- 商铺:
- 联系人:
朱先生 /林小姐
- 手机:
13751106682
- 询价:
- 电话:
0755-83238902
- 传真:
0755-83972189
- 地址:
深圳市福田区上步工业区205栋4楼4A15 /门市部:深圳市福田区华强北路国利大厦新亚洲二期N2B227
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