RJK0330DPB-01中文资料Silicon N Channel Power MOSFET Power Switching数据手册Renesas规格书

描述 Description

MOSFETs suitable for switching (motor drive, etc.) and load switch applications. Low on-resistance, high-speed switching, and high-robustness.

特性 Features

• High speed switching
• Capable of 4.5 V gate drive
• Low drive current
• High density mounting
• Low on-resistance RDS(on) = 2.1 mΩ typ. (at VGS = 10 V)
• Pb-free
• Halogen-free
文档文档标题类型日期Power MOS FET APPLICATION NOTEPDF3.27 MB日本語应用文档 2022年4月25日Attention of Handling Semiconductor DevicesPDF648 KB日本語应用文档 2021年4月16日RJK0330DPB-01 DatasheetPDF92 KB数据手册 2011年3月1日功率MOS FET 功率MOS FET使用时的注意事项PDF1.60 MB其他 2008年2月7日功率MOS FET 应用例子PDF721 KB其他 2008年2月7日可靠性手册PDF15.93 MB其他 2007年9月26日PCN of Marking for Power TransistorsPDF92 KB日本語Technical Update 2008年1月15日Addhidden documents 项目info: For device-specific or order-specific documentation, submit a support request.developer_board设计和开发模型ECAD 模块Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.扩展 ECAD 模块 模型TitleTypeDateRJK0330DPB-01 SPICE DataLIB3 KB模型 - SPICE2018年8月6日 1 models产品选择Loading products for parametric search...产品选择导出settings切换fullscreen全屏settings_backup_restore重置help小贴士器件号
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