Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching

Features • Low on-resistance • Capable of 4.5 V gate drive • High density mounting • Pb-free • Halogen-free Applications DC-DC conversion for PC and Server.

文件：260.8 Kbytes 页数：11 Pages

RENESAS

瑞萨

Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching

Renesas

瑞萨

Very high voltage NPN power transistor

Description The device is an NPN power bipolar transistor manufactured using the latest high-voltage diffused collector technology. Features ■ High gain ■ Very high voltage capability Applications ■ Haptic ■ High voltage solenoid driving

文件：133 Kbytes 页数：7 Pages

STMICROELECTRONICS

意法半导体

Low-Loss 70MHz IF SAW Filter (BW=16 MHz)

Maximum Rating: 1. Input Power Level: +20 dBm 2. Operating Temperature: -10°C to +70°C 3. Storage Temperature: -40°C to +85°C

文件：438.47 Kbytes 页数：4 Pages

TAI-SAW

嘉硕科技

IF SAW Filter Low-Loss 70MHz (BW=16 MHz)

Maximum Rating: 1. Input Power Level: +20 dBm 2. Operating Temperature: -10°C to +70°C 3. Storage Temperature: -40°C to +85°C

文件：95.36 Kbytes 页数：4 Pages

GOLLEDGE