RJK0206DPA数据手册批发采购瑞萨RENESAS-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
RJK0206DPA	文件：85.64 Kbytes Page：7 Pages	Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching Features • High speed switching • Capable of 4.5 V gate drive • Low drive current • High density mounting • Low on-resistance • Pb-free • Halogen-free 文件：85.64 Kbytes 页数：7 Pages	RENESAS 瑞萨	RENESAS
RJK0206DPA-00-J53	文件：85.64 Kbytes Page：7 Pages	Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching Features • High speed switching • Capable of 4.5 V gate drive • Low drive current • High density mounting • Low on-resistance • Pb-free • Halogen-free 文件：85.64 Kbytes 页数：7 Pages	RENESAS 瑞萨	RENESAS
RJK0206DPA_13	文件：125.53 Kbytes Page：7 Pages	Built in SBD N Channel Power MOS FET High Speed Power Switching 文件：125.53 Kbytes 页数：7 Pages	RENESAS 瑞萨	RENESAS
RJK0206DPA-00-J5A	文件：125.53 Kbytes Page：7 Pages	Built in SBD N Channel Power MOS FET High Speed Power Switching 文件：125.53 Kbytes 页数：7 Pages	RENESAS 瑞萨	RENESAS

型号：
RJK0206DPA
制造商：
RENESAS
制造商全称：
Renesas Technology Corp
功能描述：
Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching

更多RJK0206DPA供应商更新时间2025-10-12 14:02:00