6.0 Amp Glass Passivated Bridge Rectifiers

Features ●Glass passivated chip ● Low forward voltage drop ● Ideal for printed circuit board ● High surge current capability

文件：252.83 Kbytes 页数：2 Pages

HUIXIN

慧芯电子

SiC Schottky Barrier Diode

Features • New semiconductor material: Silicon Carbide Diode • No reverse recovery / No forward recovery

文件：68.42 Kbytes 页数：4 Pages

RENESAS

瑞萨

600V - 15A - Diode SiC Schottky Barrier Diode

Features • New semiconductor material: Silicon Carbide Diode • No reverse recovery / No forward recovery

文件：170 Kbytes 页数：4 Pages

RENESAS

瑞萨

600V - 30A - Diode SiC Schottky Barrier Diode

Features • New semiconductor material: Silicon Carbide Diode • No reverse recovery / No forward recovery

文件：64.769 Kbytes 页数：4 Pages

RENESAS

瑞萨