2.0A, 60V, 0.150 Ohm, N-Channel, Logic Level, ESD Rated, Power MOSFET

This product is an N-Channel power MOSFET manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. It was designed for use in applications such as switching regulato

文件：96.11 Kbytes 页数：10 Pages

INTERSIL

2.0A, 60V, 0.150 Ohm, N-Channel, Logic Level, ESD Rated, Power MOSFET

This product is an N-Channel power MOSFET manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. It was designed for use in applications such as switching regulators • 2.0A, 60V\n•rDS(ON)= 0.150Ω\n• 2kV ESD Protected\n• Temperature Compensating PSPICE® Model\n• Thermal Impedance SPICE Model\n• Peak Current vs Pulse Width Curve\n• UIS Rating Curve\n ;

Renesas

瑞萨

2.0A, 60V, 0.150 Ohm, N-Channel, Logic Level, ESD Rated, Power MOSFET

This product is an N-Channel power MOSFET manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. It was designed for use in applications such as switching regulato

文件：96.11 Kbytes 页数：10 Pages

INTERSIL

Power MOSFETs and IGBT for PDP

文件：136.18 Kbytes 页数：2 Pages

RENESAS

瑞萨

Small switching (60V, 8A)

Features 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Low-voltage drive. 5) Easily designed drive circuits. 6) Easy to use in parallel.
Structure Silicon N-channel MOSFET

文件：135.22 Kbytes 页数：4 Pages

ROHM

罗姆

Small switching (60V, 8A)

Features 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Low-voltage drive. 5) Easily designed drive circuits. 6) Easy to use in parallel.
Structure Silicon N-channel MOSFET

文件：135.22 Kbytes 页数：4 Pages

ROHM

罗姆