TEMPERATURE COMPENSATING ATTENUATOR

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RFMD

威讯联合

Silicon N Channel MOS FET High Speed Power Switching

文件：75.67 Kbytes 页数：4 Pages

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 17A@ TC=25℃ ·Drain Source Voltage -VDSS= 400V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.3Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

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ISC

无锡固电

400V, 150A, IGBT for Strobe Flash

Features  High speed switching

文件：90.29 Kbytes 页数：5 Pages

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