RFP4N06L中文资料INTERSIL数据手册PDF规格书

The RFP4N05L and RFP4N06L are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.

Formerly developmental type TA09520.

特性 Features

• 4A, 50V and 60V

• rDS(ON) = 0.800Ω

• Design Optimized for 5V Gate Drives

• Can be Driven Directly from QMOS, NMOS, TTL Circuits

• Compatible with Automotive Drive Requirements

• SOA is Power-Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Majority Carrier Device

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”