45MHz TO 2700MHz IQ MODULATOR WITH SYNTHESIZER/VCO AND BASEBAND INTERFACE`

文件：4.04262 Mbytes 页数：19 Pages

RFMD

威讯联合

45MHz TO 2700MHz IQ MODULATOR WITH SYNTHESIZER/VCO AND BASEBAND INTERFACE`

文件：4.04262 Mbytes 页数：19 Pages

RFMD

威讯联合

45MHz TO 2700MHz IQ MODULATOR WITH SYNTHESIZER/VCO AND BASEBAND INTERFACE`

文件：4.04262 Mbytes 页数：19 Pages

RFMD

威讯联合

2-18 GHz Wideband Variable-Gain Driver Amplifier

[Raytheon RF Components] Description The Raytheon RMM2080 GaAs MMIC device is a three-stage distributed medium-power amplifier with gain control capability. The circuit incorporates ion-implanted, 0.5-µm gate MESFET devices fabricated on a semi-insulating GaAs substrate. The first two stages are

文件：479.76 Kbytes 页数：4 Pages

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