3A, 80V, 0.800 Ohm, Logic Level, N-Channel Power MOSFETs

The RFD3N08L and RFD3N08LSM are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers. This performance is accomplished

文件：69.22 Kbytes 页数：8 Pages

Intersil

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 3A@ TC=25℃ ·Drain Source Voltage -VDSS= 80V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.8Ω(Max)@VGS= 5V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：298.7 Kbytes 页数：2 Pages

ISC

无锡固电

Steering Diode Arrays - ESD Suppressors

Features • (16kV) IEC 61000-4-2 capable • Fast Reverse Recovery Time • Fast Turn on Time • Low Capacitance • SMD Packages Applications • Signal Termination • Signal Conditioning • ESD Suppression • Transient Suppression

文件：126.6 Kbytes 页数：2 Pages

COMCHIP

典琦

diode terminator network

文件：102.81 Kbytes 页数：2 Pages

KOA

diode terminator network

文件：211.15 Kbytes 页数：2 Pages

KOA