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型号	下载订购	功能描述	制造商上传企业	LOGO
RF5163L	文件：510.5 Kbytes Page：12 Pages	3V-5V, 2.5GHZ LINEAR POWER AMPLIFIER Product Description The RF5163 is a linear, medium-power, high-efficiency amplifier IC designed specifically for low voltage operation. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF ampli 文件：510.5 Kbytes 页数：12 Pages	RFMD 威讯联合	RFMD
RF5163L	文件：618.43 Kbytes Page：14 Pages	3V-5V, 2.5GHZ LINEAR POWER AMPLIFIER 文件：618.43 Kbytes 页数：14 Pages	RFMD 威讯联合	RFMD
RF5163PCBA-WD	文件：510.5 Kbytes Page：12 Pages	3V-5V, 2.5GHZ LINEAR POWER AMPLIFIER Product Description The RF5163 is a linear, medium-power, high-efficiency amplifier IC designed specifically for low voltage operation. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF ampli 文件：510.5 Kbytes 页数：12 Pages	RFMD 威讯联合	RFMD
RF5163PCBA-WD	文件：618.43 Kbytes Page：14 Pages	3V-5V, 2.5GHZ LINEAR POWER AMPLIFIER 文件：618.43 Kbytes 页数：14 Pages	RFMD 威讯联合	RFMD
SMP5163	文件：213.13 Kbytes Page：10 Pages	N-Channel Silicon Junction Field-Effect Transistors Small Outline (Surface Mount) Package Devices 文件：213.13 Kbytes 页数：10 Pages	InterFET	InterFET

更多RF5163L供应商更新时间2025-10-8 14:32:00