400 W, 40 V, 1.2 to 1.5 GHz RF power LDMOS transistor

Features • High efficiency and linear gain operations • Integrated ESD protection • Internally matched pair transistors in push-pull configuration • Large positive and negative gate-source voltage range for improved class C operation • Excellent thermal stability, low HCI drift • In complia

文件：1.66676 Mbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

650 W, 28/32 V, 0.4 to 1 GHz RF power LDMOS transistor

The RF4L15400CB4 is a 400 W, 50 V high performance, internally matched LDMOS FETs, designed for multiple applications in the frequency range from 1.2 to 1.5 GHz. It is qualified up to 40 V operation. • High efficiency and linear gain operations \n• Integrated ESD protection \n• Internally matched pair transistors in push-pull configuration \n• Large positive and negative gate-source voltage range for improved class C operation \n• In compliance with the european directive 2002/95/EC;

ST

意法半导体

原厂原封

QORVO

威讯联合

上传：深圳科宇泰科技有限公司

QFN-16

RFMD

威讯联合

上传：深圳市富利微电子科技有限公司

QFN

RF

上传：深圳市拓亿芯电子有限公司