RF3826S2数据手册Qorvo中文资料规格书

描述 Description

Product Description
The RF3826 is a wideband Power Amplifier designed for CW and pulsed applications such as wireless infrastructure, RADAR, two way radios and general purpose amplification. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, these high-performance amplifiers achieve high efficiency, flat gain and large instantaneous bandwidth in a single amplifier design. The RF3826 is an input matched GaN transistor packaged in an air cavity ceramic package which provides excellent thermal stability through the use of advanced heat sink and power dissipation technologies. Ease of integration is accomplished through the incorporation of optimized input matching network within the package that provides wideband gain and power performance in a single amplifier. An external output match offers the flexibility of further optimizing power and efficiency for any sub-band within the overall bandwidth.

特性 Features

■ Advanced GaN HEMT Technology
■ Output Power of 9W
■ Advanced Heat-Sink Technology
■ 30MHz to 2500MHz
   Instantaneous Bandwidth
■ Input Internally Matched to 50
■ 28V Operation Typical
   Performance
   ■ POUT 39.5dBm
   ■ Gain 12dB
   ■ Power Added Efficiency 45%
      (30MHz to 2500MHz)
   ■ Power Added Efficiency 50%
      (200MHz to 1800MHz)
■ -40°C to 85°C Operating
   Temperature
■ Large Signal Models AvailableApplications
■ Class AB Operation for Public
   Mobile Radio
■ Power Amplifier Stage for
   Commercial Wireless
   Infrastructure
■ General Purpose Tx Amplification
■ Test and Instrumentation
■ Civilian and Military Radar

应用 Application

■ Class AB Operation for Public
   Mobile Radio
■ Power Amplifier Stage for
   Commercial Wireless
   Infrastructure
■ General Purpose Tx Amplification
■ Test and Instrumentation
■ Civilian and Military Radar