280 W, 28 V, 2.4 to 2.5 GHz RF power LDMOS transistor

Features • High efficiency and linear gain operations • Integrated ESD protection • Internally matched pair transistors in push-pull configuration • Large positive and negative gate-source voltage range for improved class C operation • Excellent thermal stability, low HCI drift • In complia

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STMICROELECTRONICS

意法半导体

280 W, 28 V, 2.4 to 2.5 GHz RF Power LDMOS transistor

The RF2L24280CB4 is a 280 W, internally matched LDMOS FETs, designed for multiple use especially RF energy applications including cooking, heating and medical in the frequency range from 2.4 to 2.5 GHz. It is qualified up to 32 V operation. • High efficiency and linear gain operations \n• Integrated ESD protection \n• Internally matched pair transistors in push-pull configuration \n• Large positive and negative gate-source voltage range for improved class C operation \n• In compliance with the european directive 2002/95/EC;

ST

意法半导体

QFN

RFMD

威讯联合

上传：深圳市兴联达电子有限公司(原兴达电子)

RFMD

威讯联合

上传：深圳市兴联达电子有限公司(原兴达电子)

QFN

RFMD

威讯联合

上传：深圳市兴联达电子有限公司(原兴达电子)