SI2302CDS

N-Channel20V(D-S)MOSFET

SI2302DDS

N-Channel20V(D-S)MOSFET

SI2302DDS

N-Channel20V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •TrenchFET®PowerMOSFET •100RgTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •LoadSwitchingforPortableDevices •DC/DCConverter

SI2302DDS

N-Channel20V(D-S)MOSFET

SI2302DDS

N-Channel20V(D-S)MOSFET

FEATURES •TrenchFET®powerMOSFET •100Rgtested •Materialcategorization: fordefinitionsofcompliancepleasesee www.vishay.com/doc?99912 APPLICATIONS •Loadswitchingforportabledevices •DC/DCconverter

SI2302DS

N-channelenhancementmodefield-effecttransistor

Description N-channelenhancementmodefield-effecttransistorinaplasticpackageusing TrenchMOS™technology. Productavailability:SI2302DSinSOT23. Features TrenchMOS™technology Veryfastswitching Logiclevelcompatible Subminiaturesurfacemountpackage.

SI2302DS

N-ChannelEnhancementMOSFET

■Features ●VDS=20V ●RDS(on)=85mΩ@VGS=4.5V,ID=3.6A ●RDS(on)=115mΩ@VGS=2.5V,ID=3.1A

SI2302DS

N-channelenhancementmodefield-effecttransistor

1.Description N-channelenhancementmodefield-effecttransistorinaplasticpackageusing TrenchMOS™1technology. Productavailability: SI2302DSinSOT23. 2.Features nTrenchMOS™technology nVeryfastswitching nLogiclevelcompatible nSubminiaturesurfacemountpackage. 3.Applic

SI2302DS-HF

N-ChannelMOSFET

■Features ●VDS=20V ●RDS(on)=85mΩ@VGS=4.5V,ID=3.6A ●RDS(on)=115mΩ@VGS=2.5V,ID=3.1A ●Pb−FreePackageMaybeAvailable.TheG−SuffixDenotesa Pb−FreeLeadFinish

SI2302-TP

N-ChannelEnhancementModeFieldEffectTransistor

Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •20V,3.0A,RDS(ON)=55mΩ@VGS=4.5V RDS(ON)=82mΩ@VGS=2.5V •HighdensecelldesignforextremelylowRDS(ON) •Ruggedandreliable •Leadfreeproductisacquired •SOT-23Package •MarkingCode:S2 •Epo