3V, 2.5GHZ LINEAR POWER AMPLIFIER

Product Description The RF2189 is a linear, medium-power, high-efficiency amplifier IC designed specifically for low voltage operation. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifi

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RFMD

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GaAs HBT POWER AMPLIFIER 0.5W, 400MHz to 2700MHz

文件：863.3 Kbytes 页数：11 Pages

RFMD

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GaAs HBT POWER AMPLIFIER 0.5W, 400MHz to 2700MHz

文件：863.3 Kbytes 页数：11 Pages

RFMD

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GaAs HBT POWER AMPLIFIER

文件：792.71 Kbytes 页数：11 Pages

RFMD

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