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Silicon Epitaxial Trench Pin Diode for Antenna Switching

Features • Adopting the trench structure improves low capacitance. (C = 0.31 pF max) • Low forward resistance. (rf = 1.5 Ω max) • Low operation current. • Ultra small leadless Package (0805type; the use of an undersurface electrode structure) for use in compact and products.

文件：159.01 Kbytes 页数：5 Pages

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