丝印：11KV；Package：VSSOP(DGK)；REF60xx High-Precision Voltage Reference With Integrated ADC Drive Buffer

1 Features 1• Excellent Temperature Drift Performance – 5 ppm/°C (max) from –40°C to +125°C • Extremely Low Noise – Total Noise: 5 μVRMS With 47-μF Capacitor – 1/f Noise (0.1 Hz to 10 Hz): 3 μVPP/V • Integrated ADC Drive Buffer – Low Output Impedance:

文件：1.94642 Mbytes 页数：38 Pages

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600V - 1A - MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 13.5 ± typ. (at ID = 0.5 A, VGS = 10 V, Ta = 25°C) • Low drive current • High density mounting

文件：80.84 Kbytes 页数：7 Pages

RENESAS

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N-Channel 650 V (D-S) MOSFET

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VBSEMI

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DOINGTER

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