REF50xx Low-Noise, Very Low Drift, Wide VIN Precision Voltage Reference

1 Features • Low temperature drift (maximum): – Enhanced-grade (new): 2.5ppm/°C – High-grade: 3ppm/°C – Standard-grade: 8ppm/°C • High accuracy (maximum): – Enhanced-grade: 0.025% – High-grade: 0.05% – Standard-grade: 0.1% • Low noise: – Enhanced-grade: 0.5μVPP/V – High/stan

文件：4.93429 Mbytes 页数：52 Pages

TI

德州仪器

REF50xx Low-Noise, Very Low Drift, Wide VIN Precision Voltage Reference

1 Features • Low temperature drift (maximum): – Enhanced-grade (new): 2.5ppm/°C – High-grade: 3ppm/°C – Standard-grade: 8ppm/°C • High accuracy (maximum): – Enhanced-grade: 0.025% – High-grade: 0.05% – Standard-grade: 0.1% • Low noise: – Enhanced-grade: 0.5μVPP/V – High/stan

文件：4.93462 Mbytes 页数：52 Pages

TI

德州仪器

Silicon N Channel MOS FET High Speed Power Switching

文件：74.43 Kbytes 页数：6 Pages

RENESAS

瑞萨

N-Channel MOSFET uses advanced trench technology

文件：1.32895 Mbytes 页数：5 Pages

DOINGTER

杜因特

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 5A@ TC=25℃ ·Drain Source Voltage -VDSS= 500V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1.6Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：276.54 Kbytes 页数：2 Pages

ISC

无锡固电