REF35 Ultra Low-Power, High-Precision Voltage Reference

1 Features • Ultra-low quiescent current: – 650 nA (typical) • Initial accuracy: ±0.05 (maximum) • Temperature coefficient: – 12 ppm/°C (maximum for −40°C to 105°C) • Output 1/f noise (0.1 Hz to 10 Hz): 3.3 ppmP-P • NR pin to reduce noise • EN pin to reduce shutdown current consumption •

文件：2.13007 Mbytes 页数：38 Pages

TI

德州仪器

REF35 Ultra Low-Power, High-Precision Voltage Reference

1 Features • Ultra-low quiescent current: – 650 nA (typical) • Initial accuracy: ±0.05 (maximum) • Temperature coefficient: – 12 ppm/°C (maximum for −40°C to 105°C) • Output 1/f noise (0.1 Hz to 10 Hz): 3.3 ppmP-P • NR pin to reduce noise • EN pin to reduce shutdown current consumption •

文件：1.99757 Mbytes 页数：35 Pages

TI

德州仪器

REF35 Ultra Low-Power, High-Precision Voltage Reference

1 Features • Ultra-low quiescent current: – 650 nA (typical) • Initial accuracy: ±0.05 (maximum) • Temperature coefficient: – 12 ppm/°C (maximum for −40°C to 105°C) • Output 1/f noise (0.1 Hz to 10 Hz): 3.3 ppmP-P • NR pin to reduce noise • EN pin to reduce shutdown current consumption •

文件：2.13168 Mbytes 页数：38 Pages

TI

德州仪器

Silicon Power Rectifier

Silicon Power Rectifier ● Low Forward Voltage ● Glass to Metal Construction ● Glass Passivated Die ● Excellent Reliability ● VRRM to 1600V ● 1050 Amps Surge Rating

文件：119.09 Kbytes 页数：3 Pages

MICROSEMI

美高森美

Silicon Power Rectifier

Silicon Power Rectifier ● Low Forward Voltage ● Glass to Metal Seal Construction ● Glass Passivated Die ● VRRM to 1600V ● 1050 Amps Surge Rating

文件：148.29 Kbytes 页数：2 Pages

MICROSEMI

美高森美