丝印：2ESC；Package：SOT-23(DBV)；REF34xx Low-Drift, Low-Power, Small-Footprint Series Voltage Reference

1 Features • Initial accuracy: ±0.05% (maximum) • Temperature coefficient : 6 ppm/°C (maximum) • Operating temperature range: −40°C to +125°C • Output current: ±10 mA • Low quiescent current: 95 μA (maximum) • Ultra-low zero load dropout voltage: 100 mV (maximum) • Wide input voltage:

文件：1.91222 Mbytes 页数：31 Pages

TI

德州仪器

Silicon Power Rectifier

• Glass Passivated Die • 800A surge rating • Glass to metal seal construction • VRRM to 1600V

文件：119.06 Kbytes 页数：2 Pages

MICROSEMI

美高森美

N-Channel 150 V (D-S) MOSFET

文件：277.07 Kbytes 页数：11 Pages

VISHAYVishay Siliconix

威世威世科技公司

N-Channel 150-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • PWM Optimized for Fast Switching In Small Footprint • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Primary Side Switch for Low Power DC/DC Converters

文件：77.85 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司