丝印：R31B；Package：SOT-23(DBZ)；REF31xx 15ppm/°C Maximum, 100-μA, SOT-23 Series Voltage Reference

1 Features 1• MicroSize Package: SOT23-3 • Low Dropout: 5 mV • High Output Current: ±10 mA • High Accuracy: 0.2% Maximum • Low IQ: 115 μA Maximum • Excellent Specified Drift Performance: – 15 ppm/°C (Maximum) from 0°C to +70°C – 20 ppm/°C (Maximum) from –40°C to +125°C 2 Application

文件：1.24746 Mbytes 页数：26 Pages

TI

德州仪器

3V 1800MHZ LINEAR AMPLIFIER MODULE

Product Description The RF3120 is a high-power, high-efficiency linear amplifier IC targeting 3V handheld systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in dual-mode 3V CD

文件：62.49 Kbytes 页数：6 Pages

RFMD

威讯联合

3V 1800MHZ LINEAR AMPLIFIER MODULE

Product Description The RF3120 is a high-power, high-efficiency linear amplifier IC targeting 3V handheld systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in dual-mode 3V CD

文件：62.49 Kbytes 页数：6 Pages

RFMD

威讯联合

5MHz to 300MHz 35dB Reverse Hybrid (Low Current)

文件：200.41 Kbytes 页数：3 Pages

RFMD

威讯联合