TCK-145

Inductor

TCXO-145CB

TemperatureCompensatedCrystalOscillator

■Features ●Smallpackage. ■TypicalApplications ●PLLOscillatorforISDN. ●T.V.camera. ■StandardFrequencies ●14.318181MHz. ●16.384MHz.

TIP145

SiliconPNPDarlingtonPowerTransistors

DESCRIPTION ·WithTO-3PNpackage ·DARLINGTON ·HighDCcurrentgain ·ComplementtotypeTIP140/141/142 APPLICATIONS ·Designedforgeneral–purposeamplifierandlowfrequencyswitchingapplications.

TIP145

PNPSILICONPOWERDARLINGTONS

●DesignedforComplementaryUsewithTIP140,TIP141andTIP142 ●125Wat25°CCaseTemperature ●10AContinuousCollectorCurrent ●MinimumhFEof1000at4V,5A

TIP145

POWERTRANSISTORS(10A,60-100V,125W)

TIP145

COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS

DESCRIPTION TheTIP140,TIP141andTIP142aresiliconepitaxial-baseNPNpowertransistorsinmonolithicDarlingtonconfigurationandaremountedinTO-218plasticpackage.Theyareintentedforuseinpowerlinearandswitchingapplications. ThecomplementaryPNPtypesareTIP145,TIP146andTI

TIP145

PNPSILICONPOWERDARLINGTONS

●DesignedforComplementaryUsewithTIP140,TIP141andTIP142 ●125Wat25°CCaseTemperature ●10AContinuousCollectorCurrent ●MinimumhFEof1000at4V,5A

TIP145

DARLINGTONCOMPLEMENTARYSILICONPOWERTRANSISTORS

DarlingtonComplementarySiliconPowerTransistors Designedforgeneral−purposeamplifierandlowfrequencyswitchingapplications. Features •HighDCCurrentGain− MinhFE=1000@IC =5.0A,VCE=4V •Collector−EmitterSustainingVoltage−@30mA

TIP145

10AMPEREDARLINGTONCOMPLEMENTARYSILICONPOWERTRANSISTORS

TIP140,TIP141,TIP142-->NPN TIP145,TIP146,TIP147--->PNP ...designedforgeneral–purposeamplifierandlowfrequencyswitchingapplications. •HighDCCurrentGain—MinhFE=1000@IC=5A,VCE=4V •Collector–EmitterSustainingVoltage—@30mA VCEO(sus)=60Vdc(Min)—TIP140,

TIP145

MonolithicConstructionWithBuiltInBase-EmitterShuntResistors

Features •MonolithicConstructionWithBuiltInBase-EmitterShuntResistors •HighDCCurrentGain:hFE=1000@VCE=-4V,IC=-5A(Min.) •IndustrialUse •ComplementtoTIP140/141/142