RDGD3100F3PH5EVB中文资料恩XP数据手册PDF规格书

Key Features

SPI interface for safety monitoring, programmability and flexibility

Low propagation delay and minimal PWM distortion

Integrated galvanic signal isolation (up to 8 kV)

Integrated gate drive power stage capable of 15 A peak source and sink

Fully programmable active Miller clamp

Compatible with negative gate supply

Compatible with current sense and temperature sense IGBTs

Integrated soft shutdown, two-level turn-off, active clamp and segmented drive forwave shaping

CMTI > 100 V/ns

Compatible with 200 V to 1700 V IGBT/SiC, power range > 125 kW

Operating temperature range −40 °C to 125 °C

External creepage distance (CPG): > 7.8 mm

Operating frequency > 40 kHz

5.0 V and 3.3 V tolerant MCU interface available