RD48F3P0VB00中文资料英特尔数据手册PDF规格书

Introduction

This document provides information about the Intel StrataFlash® Embedded Memory (P30) device and describes its features, operation, and specifications.

Product Features

■ High performance

— 85/88 ns initial access

— 40 MHz with zero wait states, 20 ns clock-to data output synchronous-burst read mode

— 25 ns asynchronous-page read mode

— 4-, 8-, 16-, and continuous-word burst mode

— Buffered Enhanced Factory Programming (BEFP) at 5 µs/byte (Typ)

— 1.8 V buffered programming at 7 µs/byte (Typ)

■ Architecture

— Multi-Level Cell Technology: Highest Density at Lowest Cost

— Asymmetrically-blocked architecture

— Four 32-KByte parameter blocks: top or bottom configuration

— 128-KByte main blocks

■ Voltage and Power

—VCC(core) voltage: 1.7 V – 2.0 V

—VCCQ (I/O) voltage: 1.7 V – 3.6 V

— Standby current: 55 µA (Typ) for 256-Mbit

— 4-Word synchronous read current: 13 mA (Typ) at 40 MHz

■ Quality and Reliability

— Operating temperature: –40 °C to +85 °C

• 1-Gbit in SCSP is –30 °C to +85 °C

— Minimum 100,000 erase cycles per block

— ETOX™ VIII process technology (130 nm)

■ Security

— One-Time Programmable Registers:

• 64 unique factory device identifier bits

• 64 user-programmable OTP bits

• Additional 2048 user-programmable OTP bits

— Selectable OTP Space in Main Array:

• 4x32KB parameter blocks + 3x128KB main blocks (top or bottom configuration)

— Absolute write protection: VPP= VSS

— Power-transition erase/program lockout

— Individual zero-latency block locking

— Individual block lock-down

■ Software

— 20 µs (Typ) program suspend

— 20 µs (Typ) erase suspend

—Intel® Flash Data Integrator optimized

— Basic Command Set and Extended Command Set compatible

— Common Flash Interface capable

■ Density and Packaging

— 64/128/256-Mbit densities in 56-Lead TSOP package

— 64/128/256/512-Mbit densities in 64-Ball Intel®Easy BGA package

— 64/128/256/512-Mbit and 1-Gbit densities in Intel®QUAD+ SCSP

— 16-bit wide data bus