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RD2006LS-SB

Ultrahigh-SpeedSwitchingDiode

Ultrahigh-SpeedSwitchingDiode Features •Highbreakdownvoltage(VRRM=600V). •Highreliability. •Easytobemounted,goodheatdissipation. •Fastreverserecoverytime. •Lownoiseatthetimeofreverserecovery.

SANYOSanyo Semicon Device

三洋三洋电机株式会社

RD2006RH-SB

Ultrahigh-SpeedSwitchingDiode

DiffusedJunctionSiliconDiode Features •VRRM=600V •VF=1.75Vmax.(IF=20A) •trr=21ns(typ.)

SANYOSanyo Semicon Device

三洋三洋电机株式会社

RF2006

SAWFilter

REYCONNSREYCONNS CHINA LIMITED

来亿中国来亿中国有限公司

RG2006LN

LowVF/High-SpeedSwitchingDiode

Features •Highbreakdownvoltage(VRRM=600V). •Highreliability. •One-pointfixingtypeplasticmoldpackagefacilitatingeasymountingandheatdissipation. •Fastreverserecoverytime. •Lownoiseatthetimeofreverserecovery.

SANYOSanyo Semicon Device

三洋三洋电机株式会社

RJK2006DPE

SiliconNChannelMOSFETHighSpeedPowerSwitching

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RJK2006DPE

SiliconNChannelMOSFETHighSpeedPowerSwitching

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RJK2006DPE

SiliconNChannelMOSFETHighSpeedPowerSwitching

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RJK2006DPE

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

RJK2006DPE-TL-E

SiliconNChannelMOSFETHighSpeedPowerSwitching

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RJK2006DPF

SiliconNChannelMOSFETHighSpeedPowerSwitching

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

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